KSA916 Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSA916 Datasheet PDF : 4 Pages
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Audio Power Amplifier
• Driver Stage Amplifier
• Complement to KSC2316
KSA916
1
TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-120
-120
-5
-800
900
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
BVCBO
Collector-Base Breakdown Voltage
IC= -1mA IE=0
-120
BVCEO
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0
-120
BVEBO
Emitter-Base Breakdown Voltage
IE= -1mA, IC=0
-5
ICBO
Collector Cut-off Current
VCB= -120V, IE=0
hFE1
hFE2
DC Current Gain
VCE= -5V, IC= -10mA
60
VCE= -5V, IC= -100mA
80
VCE (sat) Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -100mA
120
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
V
V
V
-0.1
µA
240
-1
V
MHz
40
pF
hFE Classification
Classification
hFE
O
80 ~ 160
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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