STF9NM60N Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

STF9NM60N

N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD9NM60N, STF9NM60N, STP9NM60N

(TCASE = 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 1 mA, VGS = 0

VDS = max rating

VDS = max rating, @125 °C

VGS = ± 20 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 3.25 A

600

V

1 µA

100 µA

100 nA

2

3

4V

0.63 0.745 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

452

pF

- 30 - pF

1.45

pF

Coss

(1)

eq.

Equivalent output

catacitance

VGS = 0, VDS = 0 to 480 V

- 79 - pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

Rg Gate input resistance

VDD = 480 V, ID = 6.5 A,

VGS = 10 V,

(see Figure 18)

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

17.4

nC

-

3

- nC

9.7

nC

- 4.8 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

4/16

Doc ID 18063 Rev 1

Share Link: