FDS8880 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS8880 Datasheet PDF : 12 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
40
TJ = 25oC
30
20
TJ = 150oC
10
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
50
VGS = 10V
40
VGS = 5V
30
VGS = 4V
VGS = 3V
50
40
ID = 11.6A
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
20
10
0
0
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
10
ID = 1A
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.2
VGS = VDS, ID = 250µA
1.0
1.0
0.8
0.6
-80
VGS = 10V, ID = 11.6A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2007 Fairchild Semiconductor Corporation
5
FDS8880 Rev. B
www.fairchildsemi.com
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