FDS8880 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS8880 Datasheet PDF : 12 Pages
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Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 11.6A
VGS = 10V, RGS = 11Ω
-
-
51
ns
-
7
-
ns
-
27
-
ns
-
38
-
ns
-
15
-
ns
-
-
80
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = 11.6A
-
ISD = 2.1A
-
ISD = 11.6A, dISD/dt = 100A/µs -
ISD = 11.6A, dISD/dt = 100A/µs -
-
1.25
V
-
1.0
V
-
30
ns
-
20
nC
Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 12.8A, VDD = 30V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.
©2007 Fairchild Semiconductor Corporation
3
FDS8880 Rev. B
www.fairchildsemi.com
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