BFQ136 Просмотр технического описания (PDF) - Philips Electronics
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BFQ136 Datasheet PDF : 9 Pages
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ136
handbook, full pagewidth
V BB
HF choke
4.7 µF
VCC
1.5 µF
input
75 Ω
14 nH
9 pF
6 nH
9 pF
3 pF
1 nF
9 pF
1 kΩ
9 pF
4.7 µF
DUT
14 nH 1.8 pF 7.5 nH 20 pF
3.3 pF
3 pF 36 nH
36 nH
output
75 Ω
MEA261
Fig.2 Intermodulation distortion MATV test circuit.
handboo1k,2h0alfpage
h FE
80
MBB361
12
handbook, halfpage
Cc
(pF)
8
MEA263
40
4
0
0
40
80
120
160
I C (mA)
VCE = 15 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current.
0
0
10
VCB (V)
20
IE = ie = 0; f = 1 MHz; Tj = 25 °C
Fig.4 Collector capacitance as a function of
collector-base voltage.
September 1995
4
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