3DD13003 Просмотр технического описания (PDF) - Transys Electronics Limited

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3DD13003

TO-220 Plastic-Encapsulated NPN Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-220 Plastic-Encapsulated Transistors

3DD13003 TRANSISTOR (NPN)

TO-220

FEATURES

Power dissipation

1. BASE

PCM:

1.5 W (Tamb=25℃)

2. COLLECTOR

Collector current

ICM:

1.5 A

Collector-base voltage

V(BR)CBO:

700 V

Operating and storage junction temperature range

3. EMITTER

123

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

Collector-base breakdown voltage

V(BR)CBO

Ic= 1000µA, IE=0

700

Collector-emitter breakdown voltage V(BR)CEO

Ic= 10mA, IB=0

400

Emitter-base breakdown voltage

V(BR)EBO

IE= 1000µA, IC=0

9

Collector cut-off current

ICBO

VCB= 700V, IE=0

1000

Collector cut-off current

ICEO

VCE= 400V, IB=0

500

Emitter cut-off current

IEBO

VEB= 9V, IC=0

1000

DC current gain

hFE(1)

VCE= 2V, IC= 0.5 A

8

40

hFE(2)

VCE= 10V, IC= 0.5 mA

5

Collector-emitter saturation voltage

VCE(sat) IC=1000mA, IB=250 mA

1

Base-emitter saturation voltage

VBE(sat) IC=1000mA, IB= 250mA

1.2

Base-emitter voltage

Transition frequency

Fall time

Storage time

VBE

IE= 2000 mA

3

fT

Ic=100mA, VCE=10V

5

f=1MHZ

tf

Vcc=100V, Ic=1A

0.5

ts

IB1=-IB2=0.2A

2.5

UNIT

V

V

V

µA

µA

µA

V

V

V

MHZ

µS

µS

CLASSIFICATION OF hFE(1)

Rank

Range

8-10

10-15

15-20

20-25

25-30

30-35

35-40

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