2SD2459(2002) Просмотр технического описания (PDF) - Panasonic Corporation
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2SD2459 Datasheet PDF : 4 Pages
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Transistors
2SD2459
Silicon NPN epitaxial planar type
For low-frequency output amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low collector-emitter saturation voltage VCE(sat)
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
150
V
Collector-emitter voltage (Base open) VCEO
150
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
3.0±0.15
0.4±0.04
45˚
Marking Symbol: 2E
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
150
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
150
Emitter-base voltage (Collector open) VEBO IC = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 75 V, IE = 0
Forward current transfer ratio
hFE1 *2 VCE = 2 V, IC = 100 mA
120
hFE2 *1 VCE = 2 V, IC = 500 mA
40
Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 25 mA
Base-emitter saturation voltage *1
VBE(sat) IC = 500 mA, IB = 25 mA
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1
340
0.11 0.30
0.8 1.2
90
12 20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: December 2002
SJC00264BED
1
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