MDF9N60TH Просмотр технического описания (PDF) - MagnaChip Semiconductor
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Компоненты Описание
производитель
MDF9N60TH Datasheet PDF : 6 Pages
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20
Vgs=5.5V Notes
=6.0V 1. 250㎲ Pulse Test
=6.5V 2. TC=25℃
=7.0V
15
=8.0V
=10.0V
=15.0V
10
5
5
10
15
20
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. VGS = 10 V
2. ID = 4.5 A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
1.5
VGS=10.0V
1.0
VGS=20V
0.5
0
5
10
15
20
25
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150℃ 25℃
-55℃
1
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
10
150℃
25℃
1
0.1
2
4
6
8
10
VGS [V]
Fig.5 Transfer Characteristics
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov 2009. Version 2.2
3
MagnaChip Semiconductor Ltd.
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