MDF9N60TH Просмотр технического описания (PDF) - MagnaChip Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MDF9N60TH Datasheet PDF : 6 Pages
| |||
MDF9N60
N-Channel MOSFET 600V, 9A, 0.75Ω
General Description
The MDF9N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF9N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 9.0A
RDS(ON) ≤ 0.75Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
9.0
5.7
32
48
0.38
4.8
4.5
480
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov 2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.62
Unit
oC/W
MagnaChip Semiconductor Ltd.
Share Link: 