DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

K8A55DA Просмотр технического описания (PDF) - Toshiba

Номер в каталоге
Компоненты Описание
производитель
K8A55DA Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK8A55DA
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10μ
100μ
rth – tw
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
100
ID max (pulse) *
10 ID max (continuous)
100 μs *
1 ms *
1
DC OPEATION
Tc = 25°C
0.1
0.01
Single pulse Tc=25
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
200
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
15 V
Test circuit
RG = 25 Ω
VDD = 90 V, L = 5 mH
BVDSS
IAR
VDD
VDS
Wave form
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5
2010-04-06

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]