2SD864(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 120
—
voltage
Emitter to base breakdown
V(BR)EBO
7
—
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICBO
ICEO
hFE
VCE(sat)1
—
—
—
—
1000 —
—
—
VCE(sat)2
—
—
Base to emitter saturation
VBE(sat)1
—
—
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test.
VBE(sat)2
—
—
ton
—
0.5
tstg
—
4.5
tf
—
1.1
Max
—
Unit
V
Test conditions
IC = 25 mA, RBE = _
—
V
IE = 50 mA, IC = 0
100 µA
10
µA
20000
1.5 V
VCB = 120 V, IE = 0
VCE = 100 V, RBE = _
VCE = 3 V, IC = 1.5 A*1
IC = 1.5 A, IB = 3 mA*1
3.0 V
2.0 V
IC = 3 A, IB = 30 mA*1
IC = 1.5 A, IB = 3 mA*1
3.5 V
—
µs
—
µs
—
µs
IC = 3 A, IB = 30 mA*1
IC = 1.5 A, IB1 = –IB2 = 3 mA
2