AP4503GM Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP4503GM Datasheet PDF : 7 Pages
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N-Channel
12
I D =6A
V DS =24V
10
8
6
4
2
0
0
4
8
12
16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this
10
area limited by
RDS(ON)
100us
1ms
1
10ms
0.1
0.01
0.01
T A =25 o C
Single Pulse
100ms
1s
10s
DC
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off)tf
AP4503GM
f=1.0MHz
10000
1000
C iss
C oss
100
C rss
10
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Dity factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
-6.3
t
T
-5
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
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