AP4503GM Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP4503GM Datasheet PDF : 7 Pages
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AP4503GM
N-Channel
100
T A =25 o C
80
10V
60
7.0V
40
5.0V
4.5V
20
V G =3.0V
0
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
42
I D =6A
T A =25 o C
38
34
30
26
22
18
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
7
6
5
4
3
T j =150 o C
T j =25 o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
70
60 T A =150 o C
50
10V
7.0V
40
30
5.0V
4.5V
20
10
V G =3.0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =6A
1.6
V G =10V
1.4
1.2
1.0
-6.3
-5
0.8
0.6
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
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