AP4511GM-HF Просмотр технического описания (PDF) - Advanced Power Electronics Corp
Номер в каталоге
Компоненты Описание
производитель
AP4511GM-HF Datasheet PDF : 7 Pages
| |||
P-Channel
12
I D = -6 A
10
V DS = - 28V
8
6
4
2
0
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
0.1
T c =25 o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V DS =-5V
T j =25 o C
20
T j =150 o C
10
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
AP4511GM-HF
f=1.0MHz
10000
1000
C iss
C oss
C rss
100
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
0.001
0.0001
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
7
Share Link: 