AP4511GM Просмотр технического описания (PDF) - Advanced Power Electronics Corp
Номер в каталоге
Компоненты Описание
производитель
AP4511GM Datasheet PDF : 7 Pages
| |||
AP4511GM
P-Channel
50
T A = 25 o C
40
30
-10V
-7.0V
-5.0V
-4.5V
20
V G = - 3.0V
10
0
0
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D = -4 A
55
T A =25 o C
50
45
40
35
30
3
5
7
9
11
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
5
4
T j =150 o C
3
T j =25 o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
50
T A = 150 o C
40
30
20
10
-10V
-7.0V
-5.0V
-4.5V
V G = - 3.0V
0
0
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.4
I D =-6A
V G =-10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Share Link: 