AP4511GM Просмотр технического описания (PDF) - Advanced Power Electronics Corp

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AP4511GM

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

AP4511GM

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

ΔBVDSS/ΔTj

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Rg

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA

Static Drain-Source On-Resistance2 VGS=10V, ID=7A

VGS=4.5V, ID=5A

Gate Threshold Voltage

VDS=VGS, ID=250uA

Forward Transconductance

Drain-Source Leakage Current (Tj=25oC)

Drain-Source Leakage Current (Tj=70oC)

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS=10V, ID=7A

VDS=35V, VGS=0V

VDS=28V, VGS=0V

VGS=±20V

ID=7A

VDS=28V

VGS=4.5V

VDS=18V

ID=1A

RG=3.3Ω,VGS=10V

RD=18Ω

VGS=0V

VDS=25V

f=1.0MHz

Gate Resistance

f=1.0MHz

35 -

-

V

- 0.02 - V/℃

- 18 25 mΩ

- 29 37 mΩ

1

-

3

V

-

9

-

S

-

-

1 uA

-

- 25 uA

-

- ±100 nA

- 11 18 nC

-

3

- nC

-

6

- nC

- 12 - ns

-

7

- ns

- 22 - ns

-

6

- ns

- 830 1330 pF

- 150 - pF

- 110 - pF

- 1.2 1.8 Ω

Source-Drain Diode

Symbol

VSD

trr

Qrr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Reverse Recovery Charge

Test Conditions

IS=1.7A, VGS=0V

IS=7A, VGS=0V

dI/dt=100A/µs

Min. Typ. Max. Units

-

- 1.2 V

- 18 - ns

- 12 - nC

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