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MTP30P06

TMOS V Power Field Effect Transistor

Motorola => Freescale 

MTP30P06V

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

Vdc

—

62

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

2.0

2.6

4.0

Vdc

—

5.3

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 30 Adc)

(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)

Forward Transconductance

(VDS = 8.3 Vdc, ID = 15 Adc)

RDS(on)

VDS(on)

gFS

—

0.067

0.08

Ohm

Vdc

—

2.0

2.9

—

—

2.8

5.0

7.9

Mhos

—

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

(VDD = 30 Vdc, ID = 30 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 48 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

1562

2190

pF

—

524

730

—

154

310

—

14.7

30

ns

—

25.9

50

—

98

200

—

52.4

100

—

54

80

nC

—

9.0

—

—

26

—

—

20

—

Vdc

—

2.3

3.0

—

1.9

—

Reverse Recovery Time

Reverse Recovery Stored Charge

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

ta

tb

QRR

—

175

—

ns

—

107

—

—

68

—

—

0.965

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

LD

nH

—

3.5

—

4.5

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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