UPC1658G(1) Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

UPC1658G(1)

LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER

NEC => Renesas Technology 

µPC1658G

ABSOLUTE MAXIMUM RATINGS

Parameter

Supply Voltage

Output Transistor Current

Power Dissipation

Operating Ambient Temperature

Storage Temperature

Symbol

VCC

IQ3

PD

TA

Tstg

Conditions

TA = +25 °C

TA = +25 °C

Mounted on double copper clad 50 × 50 × 1.6 mm

epoxy glass PWB (TA = +70 °C)

Rating

Unit

12

V

40

mA

280

mW

–40 to +75

°C

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 10.0 V, ZS = ZL = 50 Ω, Test circuit 1)

Parameter

Circuit Current

Power Gain 1

Power Gain 2

Power Gain 3

Noise Figure 1

Noise Figure 2

Symbol

ICC

GP1

GP2

GP3

NF1

NF2

No signal

f = 10 MHz

f = 100 MHz

f = 500 MHz

f = 100 MHz

f = 500 MHz

Conditions

MIN. TYP. MAX. Unit

9

−

18

mA

37

41

45

dB

28

31

34

dB

14

17

20

dB

−

1.5

2.5

dB

−

2.0

3.0

dB

TEST SET-UP

Power Supply

Signal Generator

INPUT

ZS = 50 Ω

0.01 µF

Test Circuit

1 to 3

Spectrum Analyzer or

Network Analyzer

OUTPUT

ZL = 50 Ω

Data Sheet P11120EJ3V0DS00

3

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