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H13003

Bipolar Junction Transistor

Unspecified 

R

www.jdsemi.cn

深圳市晶导电子有限公司

ShenZhen Jingdao Electronic Co.,Ltd.

H13003

Bipolar Junction Transistor

◆Si NPN

◆RoHS COMPLIANT

1．APPLICATION

Fluorescent Lamp、Electronic Ballast、

Charger and Switch-mode power supplies

2．FEATURES

High voltage capability

Features of good high temperature

High switching speed

3．PACKAGE

TO-126

4．Electrical Characteristics

4.1 Absolute Maximum Ratings

1 Base(B) 2 Collector(C) 3 Emitter(E)

Tamb= 25℃ unless specified

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

Collector-Emittor Voltage

Emittor- Base Voltage

Collector Current

Power Dissipation

Ta=25℃

Tc=25℃

Junction Temperature

Storage Temperature

4.2 Electrical Parameter

Tamb= 25℃ unless specified

PARAMETER

SYMBOL

Collector-Base Voltage

Collector-Emittor Voltage

Emittor-Base Voltage

Collector-Base Cutoff Current

Collector-Emittor Cutoff Current

Emittor-Base Cutoff Current

DC Current Gain

Collector-Emittor Saturation Voltage

Base-Emittor Saturation Voltage

Rising Time

Falling Time

Storage Time

Typical Frequency

BVCBO

BVCEO

BVEBO

ICBO

ICEO

IEBO

hFE*

VCE

*

sat

VBE

*

sat

tr

tf

ts

fT

VCBO

VCEO

VEBO

IC

Ptot

Tj

Tstg

650

V

400

V

9

V

2.0

A

1.25

W

26

150

℃

-55～150

℃

TEST CONDITION

IC=1mA，IE=0

IC=1mA，IB=0

IE=1mA，IC=0

VCB=650V, IE=0

VCE=400V, IB=0

VEB=9V, IC=0

VCE=5V, IC=1mA

VCE=5V, IC=200mA

IC=1A, IB=0.5A

IC=1A, IB=0.5A

IC=250mA (UI9600)

VCE=20V,IC=20mA,

f=1MHz

VALUE

MIN TYP MAX

650

400

9

10

20

10

8

15

30

0.6

1.2

0.9

0.9

2.1

3.3

UNIT

V

V

V

μA

μA

μA

V

V

μs

μs

μs

5

MHz

＊: Pulse test tp≤300μs,δ≤2%

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C

Tel：0755-29799516 Fax：0755-29799515

第 1 页 2013 版

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