BTS244Z Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
BTS244Z Datasheet PDF : 10 Pages
| |||
Electrical Characteristics
Parameter
at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
VDS>2*ID*RDS(on)max , ID = 35 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2 Ω
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2 Ω
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2 Ω
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2 Ω
Gate Charge Characteristics
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 47 A, VGS = 0 to 5 V
Gate charge total
VDD = 40 V, ID = 47 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 47 A
Semiconductor Group
BTS 244 Z
Symbol
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
25
-
-S
- 2130 2660 pF
- 600 750
- 320 400
-
15 25 ns
tr
-
70 105
td(off)
-
40 60
tf
-
25 40
Qg(th)
-
Qg(5)
-
Qg(total)
-
V(plateau) -
4
2.5 3.8 nC
50 75
85 130
4.5
-V
1999-03-04
Share Link: 