BTS244Z Просмотр технического описания (PDF) - Siemens AG

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производитель

BTS244Z

Speed TEMPFET®

Siemens AG 

Electrical Characteristics

Parameter

at Tj = 25°C, unless otherwise specified

Thermal Characteristics

junction - case:

Thermal resistance @ min. footprint

Thermal resistance @ 6 cm 2 cooling area 1)

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA

Gate threshold voltage, VGS = VDS

ID = 130 µA

ID = 250 µA

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = -40 °C

VDS = 50 V, VGS = 0 V, Tj = 25 °C

VDS = 50 V, VGS = 0 V, Tj = 150 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V, Tj = 25 °C

VGS = 20 V, VDS = 0 V, Tj = 150 °C

Drain-Source on-state resistance

VGS = 4.5 V, ID = 19 A

VGS = 10 V, ID = 19 A

BTS 244 Z

Symbol

Values

Unit

min. typ. max.

RthJC

Rth(JA)

Rth(JA)

-

- 0.88 K/W

-

-

62

-

33

-

V(BR)DSS 55

-

-V

VGS(th)

1.2 1.6

2

- 1.65 -

IDSS

µA

-

-

0.1

-

0.1

1

-

- 100

IGSS

nA

-

10 100

-

20 100

RDS(on)

-

16 18 mΩ

- 11.5 13

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain

connection. PCB mounted vertical without blown air.

Semiconductor Group

3

1999-03-04

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