03N60Z Просмотр технического описания (PDF) - ON Semiconductor

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03N60Z

600V / N-Channel Power MOSFET

ON Semiconductor 

NDF03N60Z, NDD03N60Z

PACKAGE DIMENSIONS

TO−220 FULLPACK, 3−LEAD

CASE 221AH

ISSUE F

E

E/2

Q

1 23

A

P

0.14 M B A M

DC

L

L1

3X b2

3X b

0.25 M B A M C

e

FRONT VIEW

SECTION D−D

B

SEATING

PLANE

A

H1

A1

NOTE 3

c

A2

SIDE VIEW

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR UNCONTROLLED IN THIS AREA.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE

PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO

EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE

MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.

5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.

LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.

6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY

MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1

AND H1 FOR MANUFACTURING PURPOSES.

MILLIMETERS

DIM MIN MAX

A 4.30 4.70

A1 2.50 2.90

A2 2.50 2.90

b 0.54 0.84

b2 1.10 1.40

c 0.49 0.79

D 14.70 15.30

E 9.70 10.30

e

2.54 BSC

H1 6.60 7.10

L 12.50 14.73

L1 --- 2.80

P 3.00 3.40

Q 2.80 3.20

A

NOTE 6

NOTE 6

H1

D

D

A

ALTERNATE CONSTRUCTION

SECTION A−A

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