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03N60Z Datasheet PDF : 10 Pages
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NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V, 3.6 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
VDSS
600
V
ID
3.1
2.6
A
(Note 1)
Continuous Drain Current RqJC
TA = 100°C
ID
2.9
1.65 A
(Note 1)
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 3.0 A
ESD (HBM) (JESD 22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
IDM
PD
VGS
EAS
Vesd
VISO
dv/dt
12
10
A
27
61
W
±30
V
100
mJ
3000
V
4500
V
4.5
V/ns
Continuous Source Current (Body
IS
Diode)
3.0
A
Maximum Temperature for Soldering
TL
Leads
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 3.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
www.onsemi.com
VDSS
600 V
RDS(on) (MAX) @ 1.2 A
3.6 W
N−Channel
D (2)
G (1)
S (3)
1
23
NDF03N60ZG,
NDF03N60ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD03N60Z−1G
IPAK
CASE 369D
12
3
NDD03N60ZT4G
DPAK
CASE 369AA
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
1
Publication Order Number:
NDF03N60Z/D
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