2SB857 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SB857 Datasheet PDF : 5 Pages
| |||
2SB857, 2SB858
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to base
breakdown voltage
V(BR)CBO
Collector to emitter
breakdown voltage
V(BR)CEO
Emitter to base
breakdown voltage
V(BR)EBO
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
hFE2
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter voltage VBE
Gain bandwidth product fT
2SB857
Min Typ
–70 —
–50 —
–5 —
——
60 —
35 —
——
——
— 15
Max
—
—
—
–1
320
—
–1
–1
—
2SB858
Min Typ
–70 —
–60 —
–5 —
——
60 —
35 —
——
——
— 15
Notes: 1. The 2SB857 and 2SB858 are grouped by hFE1 as follows.
2. Pulse test
Max
—
—
—
–1
320
—
–1
–1
—
Unit Test conditions
V
IC = –10 µA, IE = 0
V
IC = –50 mA, RBE = ∞
V
IE = –10 µA, IC = 0
µA VCB = –50 V, IE = 0
VCE = IC = –1 A*2
–4 V IC = –0.1 A*2
V
IC = –2 A, IB = –0.2 A*2
V
MHz
VCE = –4 V, IC = –1 A*2
VCE = –4 V,
IC = –0.5 A*2
B
60 to 120
C
D
100 to 200 160 to 320
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case Temperature TC (°C)
Area of Safe Operation
–5
(–10 V, –4 A)
IC max (Continuous)
DC
–2
TC = 25°C
–1.0
(–20 V, –2 A) Operation
–0.5
(–50 V, –0.24 A)
–0.2
–0.1
–0.05
–1 –2
2SB857
2SB858
–5 –10 –20 –50 –100
Collector to emitter Voltage VCE (V)
2
Share Link: 