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M30803FGFP Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC

Номер в каталоге
Компоненты Описание
производитель
M30803FGFP
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi
M30803FGFP Datasheet PDF : 317 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
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M16C/80
SINGLE-CHIP
Mitsubishi microcomputers
(100-pin version) group
16-BIT CMOS MICROCOMPUTER
Performance Outline
Table 1.1.1 is a performance outline of M16C/80 (100-pin version) group.
Table 1.1.1. Performance outline of M16C/80 (100-pin version) group
Item
Number of basic instructions
Shortest instruction execution time
Memory
ROM
capacity
RAM
I/O port
P0 to P10 (except P85)
Input port P85
Multifunction TA0, TA1, TA2, TA3,TA4
timer
TB0, TB1, TB2, TB3, TB4, TB5
Serial I/O UART0, UART1, UART2,
UART3, UART4
A-D converter
D-A converter
DMAC
DRAM controller
CRC calculation circuit
X-Y converter
Watchdog timer
Interrupt
Clock generating circuit
Supply voltage
Power consumption
I/O
I/O withstand voltage
characteristics Output current
Memory expansion
Operating ambient temperature
Device configuration
Package
Performance
106 instructions
50ns(f(XIN)=20MHz)
See ROM expansion figure.
10/20 K bytes
8 bits x 10, 7 bits x 1
1 bit x 1
16 bits x 5
16 bits x 6
(UART or clock synchronous) x 5
10 bits x (8 + 2) channels
8 bits x 2
4 channels
CAS before RAS refresh, self-refresh, EDO, FP
CRC-CCITT
16 bits X 16 bits
15 bits x 1 (with prescaler)
29 internal and 8 external sources, 5 software sources, 7
levels
2 built-in clock generation circuits
(built-in feedback resistance, and external ceramic or
quartz oscillator)
4.2 to 5.5V (f(XIN)=20MHz) Mask ROM and flash
memory version
2.7 to 5.5V (f(XIN)=10MHz) Mask ROM and flash
memory version
45mA (f(XIN) = 20MHz without software wait,Vcc=5V)
Mask ROM 128 Kbytes version
5V
5mA
Available (up to 16M bytes)
–40 to 85oC
CMOS high performance silicon gate
100-pin plastic mold QFP
5

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