2SC4424 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4424 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4424
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
Collector-base breakdown voltage IC=1mA; IE=0
Collector-emitter breakdown voltage IC=10mA; RBE=∞
V(BR)EBO Emitter-base breakdown voltage
VCEX(SUS) Collector-emitter sustaining voltage
VCEsat Collector-emitter saturation voltage
IE=1mA; IC=0
IC=8A;IB1=0.8A;
IB2=-3.2A;L=200μH
IC=10A;IB=2A
VBEsat Base-emitter saturation voltage
IC=10A;IB=2A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=10A ; VCE=5V
hFE-3
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=2A ; VCE=10V
COB
Output capacitance
VCB=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=12A;RL=16.6Ω
IB1=2.4A;- IB2=4.8A
VCC=200V
hFE-1 classifications
L
M
N
15-30
20-40
30-50
MIN TYP. MAX UNIT
500
V
400
V
7
V
400
V
0.8
V
1.5
V
10
μA
10
μA
15
50
10
10
20
MHz
230
pF
0.5 μs
2.5 μs
0.3 μs
2
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