RT8120 Просмотр технического описания (PDF) - Richtek Technology
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RT8120 Datasheet PDF : 17 Pages
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RT8120
Electrical Characteristics
( TA = 25°C, unless otherwise specified)
Parameter
Symbol
Supply Current
ICC
Shutdown Current
ISHDN
Power On Reset Threshold VCCR_TH
Power On Reset
Hysteresis
VCC_Hys
Switching Frequency
fOSC
Ram p Amplitude
ΔV OSC
Minimum Duty Cycle
Maximum Duty Cycle
DMAX
Reference Voltage
VREF
Open Loop DC Gain
Gain Bandwidth
ADC
GBW
Test Conditions
UGATE, LGATE Open, VCC = 12V
UGATE, LGATE Open, VCC = 12V
VCC Rising
RT8120A/C
RT8120B/D
Guaranteed by Design
Guaranteed by Design
Min Typ Max Unit
-- 1.5 -- mA
-- 0.7 -- mA
3.9 4.1 4.3 V
0.26 0.45 0.64 V
270 300 330 kHz
-- 1.3 -- VP-P
0
--
--
%
-- 85 -- %
0.591 0.6 0.609
V
0.792 0.8 0.808
-- 70 -- dB
-- 10 -- MHz
Slew Rate
Transconductance
SR
Guaranteed by Design, CL = 10pF
gm
--
6
500 700
Output Source Current
Output Sink Current
Soft-Start Time
Upper Gate Sourcing
Ability
ICOMPSK
ICOMPSC
tSS
VFB < VREF
VFB < VREF
RT8120A/C
RT8120B/D
80 120
80 120
-- 1.5
--
2
IUG_SRC VBOOT − VPHASE = 12V, max source current -- 1.2
Upper Gate RDS(ON)
Sinking
Lower Gate Sourcing
Ability
RUG_SNK VUGATE − VPHASE = 0.1V
ILG_SRC VCC = 12V, max source current
--
3
-- 1.2
Lower Gate RDS(ON)
Sinking
RLG_INK VLGATE = 0.1V
-- 1.8
Deadtime between UGATE
Off to LGATE On
VUGATE − VPHASE = 1.2V to VLGATE =1.2V
--
30
Deadtime Between LGATE
Off to UGATE On
VUGATE − VPHASE = 1.2V to VLGATE = 1.2V --
30
Protection
-- V/μs
-- μA/V
-- μA
-- μA
--
ms
--
--
A
--
Ω
--
A
--
Ω
-- ns
-- ns
Under Voltage Protection VUVP_FB
65 75 80 %
Under Voltage Delay
VD_UVP
LGATE OC Setting Current IOCSET
Over Current Threshold VPHASE
Enable Threshold
VEN
ROCSET = Open
--
6
-- μs
9 10 11 μA
-- 375 -- mV
0.3 0.4 0.55 V
Copyright ©2013 Richtek Technology Corporation. All rights reserved.
www.richtek.com
6
is a registered trademark of Richtek Technology Corporation.
DS8120-08 September 2013
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