MDD3752RH Просмотр технического описания (PDF) - MagnaChip Semiconductor

Номер в каталоге

Компоненты Описание

производитель

MDD3752RH

P-Channel Trench MOSFET

MagnaChip Semiconductor 

MDD3752

P-Channel Trench MOSFET, -40V, -43A, 17mΩ

General Description

The MDD3752 uses advanced MagnaChip’s Trench

MOSFET Technology to provided high performance in on-

state resistance, switching performance and reliability.

Low RDS(ON), Low Gate Charge can be offering superior

benefit in the application.

Features

 VDS = -40V

 ID = -43A @VGS = -10V



RDS(ON)

< 17mΩ @ VGS = -10V

< 25mΩ @ VGS = -4.5V

Applications

 Inverters

 General purpose applications

D

G

Absolute Maximum Ratings (TC =25o)

Drain-Source Voltage

Gate-Source Voltage

Characteristics

Continuous Drain Current

(Note 2)

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy

Junction and Storage Temperature Range

TC=25oC

TC=100oC

TC=25oC

TC=100oC

(Note 3)

Symbol

VDSS

VGSS

ID

IDM

PD

EAS

TJ, Tstg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1)

Symbol

RθJA

RθJC

S

Rating

Unit

-40

V

±20

V

43

A

27

A

-90

A

50

W

20

128

mJ

-55~+150

oC

Rating

40

2.5

Unit

oC/W

November 2008. Version 1.0

1

MagnaChip Semiconductor Ltd.

Share Link: