1N5822 Просмотр технического описания (PDF) - ON Semiconductor
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1N5822 Datasheet PDF : 8 Pages
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1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
•ăExtremely Low VF
•ăLow Power Loss/High Efficiency
•ăLow Stored Charge, Majority Carrier Conduction
•ăShipped in plastic bags, 500 per bag
•ăAvailable in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to
the part number
•ăPb-Free Packages are Available*
Mechanical Characteristics:
•ăCase: Epoxy, Molded
•ăWeight: 1.1 Gram (Approximately)
•ăFinish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•ăLead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•ăPolarity: Cathode indicated by Polarity Band
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
AXIAL LEAD
CASE 267-05
(DO-201AD)
STYLE 1
MARKING DIAGRAM
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 10
A
1N
582x
YYWWG
G
A
= Assembly Location
1N582x = Device Code
x
= 0, 1, or 2
YY
= Year
WW
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5820/D
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