1N5820(2006) Просмотр технического описания (PDF) - ON Semiconductor
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производитель
1N5820 Datasheet PDF : 8 Pages
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1N5820, 1N5821, 1N5822
125
20 15
125
20
10
15
115
8.0
115
10
8.0
105
RqJA (°C/W) = 70
95
50
40
85
28
105
RqJA (°C/W) = 70
95
50
40
85
28
75
2.0
3.0 4.0 5.0
7.0
10
VR, REVERSE VOLTAGE (VOLTS)
15 20
Figure 1. Maximum Reference Temperature
1N5820
75
3.0 4.0 5.0
7.0
10
15 20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Maximum Reference Temperature
1N5821
125
20
115
15
10
8.0
105
95
85
75
4.0
RqJA (°C/W) = 70
50
40
28
5.0
7.0
10
15 20
VR, REVERSE VOLTAGE (VOLTS)
30 40
Figure 3. Maximum Reference Temperature
1N5822
40
35
MAXIMUM
TYPICAL
30
25
20
15
10
BOTH LEADS TO HEATSINK,
5.0
EQUAL LENGTH
0
0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0
L, LEAD LENGTH (INCHES)
Figure 4. Steady−State Thermal Resistance
1.0
The temperature of the lead should be measured using a ther-
0.5 mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
0.3 enough so that it will not significantly respond to heat surges
0.2 generated in the diode as a result of pulsed operation once
steady−state conditions are achieved. Using the measured val-
0.1 ue of TL, the junction temperature may be determined by:
TJ = TL + DTJL
0.05
0.03
0.02
0.01
0.2
0.5 1.0 2.0
5.0 10
20
50
t, TIME (ms)
LEAD LENGTH = 1/4″
Ppk
tp
t1
Ppk
TIME
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where:
DTJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
Figure 5. Thermal Response
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