1N5822(1999) Просмотр технического описания (PDF) - STMicroelectronics
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1N5822 Datasheet PDF : 5 Pages
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1N582x
THERMAL RESISTANCES
Symbol
Rth (j-a)
Rth (j-l)
Parameter
Junction to ambient
Lead length = 10 mm
Junction to lead
Lead length = 10 mm
Value
80
25
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests Conditions
IR * Reverse leakage
current
Tj = 25°C
Tj = 100°C
VR = VRRM
VF * Forward voltage drop Tj = 25°C
IF = 3 A
Tj = 25°C
IF = 9.4 A
Pulse test : * tp = 380 µs, δ < 2%
1N5820 1N5821 1N5822 Unit
2
2
2
mA
20
20
20
mA
0.475 0.5 0.525
V
0.85 0.9 0.95
V
To evaluate the conduction losses use the following equations :
P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821
P = 0.33 x IF(AV) + 0.060 IF2(RMS ) for 1N5822
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
PF(av)(W)
1.8
1.6
δ = 0.05
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(av) (A)
1.5 2.0 2.5
δ=tp/T
tp
3.0 3.5 4.0
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
PF(av)(W)
2.0
1.8
1.6
δ = 0.05
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(av) (A)
1.5 2.0
δ=tp/T
2.5 3.0
tp
3.5
2/5
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