2N4400 Просмотр технического описания (PDF) - NTE Electronics
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2N4400 Datasheet PDF : 3 Pages
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2N4400 & 2N4401
Silicon NPN Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/5C
Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1
Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
V(BR)EBO
ICEX
IBEV
IE = 0.1mA, IC = 0
VCE = 35V, VEB = 0.4V
VCE = 35V, VEB = 0.4V
DC Current Gain
2N4401
hFE
VCE = 1V, IC = 0.1mA
2N4400
2N4401
VCE = 1V, IC = 1mA
2N4400
2N4401
VCE = 1V, IC = 10mA
2N4400
2N4401
VCE = 1V, IC = 150mA
2N4400
VCE = 2V, IC = 500mA
2N4401
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
Min Typ Max Unit
40 − −
V
60 − −
V
6−−
V
− − 0.1 5 A
− − 0.1 5 A
20 − −
20 − −
40 − −
40 − −
80 − −
50 − 150
100 − 300
20 − −
40 − −
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