4926N Просмотр технического описания (PDF) - ON Semiconductor
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4926N Datasheet PDF : 7 Pages
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NTMFS4926N
TYPICAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
0
TJ = 25°C
Ciss
VGS = 0 V
Coss
Crss
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
VGS = 10 V
VDD = 15 V
ID = 15 A
td(off)
tf
tr
10
td(on)
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10
100 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01
0.1
1
1 ms
10 ms
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
11
10
QT
9
8
7
6
5
4 Qgs
3
2
1
0
02
Qgd
46
TJ = 25°C
VGS = 10 V
VDD = 15 V
ID = 30 A
8 10 12 14 16 18
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15
10
TJ = 125°C
5
TJ = 25°C
0
0.4 0.5
0.6
0.7
0.8
0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
22
20
ID = 21 A
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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