4926N Просмотр технического описания (PDF) - ON Semiconductor
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4926N Datasheet PDF : 7 Pages
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NTMFS4926N
TYPICAL CHARACTERISTICS
100
10 V
90
4.5 V
TJ = 25°C
4.0 V
80
70
3.6 V
60
50
3.2 V
40
30
VGS = 2.8 V
20
10
0
0
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
100
90
80
70
60
50
40
30
20
10
0
1
VDS = 10 V
TJ = −55°C
TJ = 25°C
TJ = 125°C
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3
ID = 30 A
4
5
6
7
8
9
VGS (V)
Figure 3. On−Resistance vs. VGS
0.016
0.015
0.014
T = 25°C
0.013
0.012
0.011
0.010
VGS = 4.5 V
0.009
0.008
0.007
0.006
VGS = 10 V
0.005
0.004
10
10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
ID = 30 A
1.5
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10,000
1,000
TJ = 150°C
TJ = 125°C
100
TJ = 85°C
10
150
5
10
15
VGS = 0 V
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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