FCP13N60N Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCP13N60N Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FCP13N60N
FCPF13N60NT
Device
FCP13N60N
FCPF13N60NT
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 1mA, VGS = 0V, TC = 25oC
600
ID = 1mA, Referenced to 25oC
-
VDS = 480V, VGS = 0V
-
VDS = 480V, VGS = 0V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 6.5A
-
gFS
Forward Transconductance
VDS = 40V, ID = 6.5A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Cosseff
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
-
VDS = 100V, VGS = 0V
f = 1MHz
-
-
VDS = 380V, VGS = 0V, f = 1MHz
-
VDS = 0V to 480V, VGS = 0V
-
VDS = 380V,ID = 6.5A
-
VGS = 10V
-
(Note 4)
-
Drain Open
-
Typ. Max. Units
-
0.73
-
V
-
V/oC
-
10
μA
-
100
-
±100 nA
-
4.0
V
0.244 0.258 Ω
16.3
-
S
1325 1765 pF
50
65
pF
3
5
pF
30
-
pF
145
-
pF
30.4 39.5 nC
6.0
-
nC
9.5
-
nC
2.8
-
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380V, ID = 6.5A
RG = 4.7Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.5A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 6.5A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 4.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
(Note 4)
-
-
-
-
-
-
14.5
39
ns
10.6 31.2 ns
45
100
ns
9.8
29.6 ns
-
13
A
-
39
A
-
1.2
V
287
-
ns
3.5
-
μC
FCP13N60N / FCPF13N60NT Rev. A
2
www.fairchildsemi.com
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