40N60A Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
40N60A Datasheet PDF : 6 Pages
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Fig. 1 Saturation Characteristics
80
TJ = 25°C
VGE = 15V
13V
70
60
50
11V
40
30
20
9V
10
7V
0
0
1
2
3
4
5
VCE - Volts
Fig. 3 Collector-Emitter Voltage
10
9
vs. GatTeJ-=E2m5°Citter Voltage
8
7
6
5
IC = 80A
4
3
IC = 40A
2
1
IC = 20A
0
8 9 10 11 12 13 14 15
VGE - Volts
Fig. 5 Input Admittance
80
Threshold VVoCElt=a1g0eV
70
60
50
40
TJ = 25°C
30
20
TJ = 125°C
TJ = - 40°C
10
0
4 5 6 7 8 9 10 11 12 13
VGE - Volts
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXSH 40N60 IXSM 40N60
IXSH 40N60A IXSM 40N60A
Fig. 2
200
180 TJ = 25°C
160
140
120
100
80
60
40
20
0
024
Output Characterstics
VGE = 15V
13V
11V
9V
7V
6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4
Temperature Dependence
1.5
of Output Saturation Voltage
1.4
VGE=15 V
IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6
1.3
1.2
1.1
Temperature Dependence of
Breakdown and
BV CES
IC = 3mA
1.0
0.9
0.8
0.7
-50 -25 0
VGE8th)
IC = 4mA
25 50 75 100 125 150
TJ - Degrees C
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
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