PAD5 Просмотр технического описания (PDF) - InterFET
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PAD5 Datasheet PDF : 1 Pages
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¥ High Impedance Protection
Circuits
C-3
PAD1, PAD2, PAD5
Low Leakage Pico-AMP Diode
Absolute maximum ratings at TA = 25¡C
Continuous Forward Gate Current
50 mA
Storage Temperature Range
– 55°C to +125°C
Lead Temperature
300°C
At 25°C free air temperature:
Electrical Characteristics
Reverse Current
Breakdown Reverse Voltage
Forward Voltage Drop
Capacitance
At 25°C free air temperature:
Electrical Characteristics
Reverse Current
Breakdown Reverse Voltage
Forward Voltage Drop
Capacitance
PAD1
PAD2
Process NJ01
Min Typ Max Min Typ Max Unit
Test Conditions
IR
–1
– 2 pA
VR = – 20V
BVR
– 45
– 45
V
IR = – 1 µA
VF
0.8 1.5
0.8 1.5 V
IF = 5 mA
CR
0.8
0.8 pF
VR = – 5 V
f = 1 MHz
PAD5
Process NJ01
Min Typ Max Unit
Test Conditions
IR
– 5 pA
VR = – 20V
BVR
– 45
V
IR = – 1 µA
VF
0.8 1.5 V
IF = 5 mA
CR
0.8 pF
VR = – 5 V
f = 1 MHz
TO-18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Cathode, 2 Case, 3 Anode
Surface Mount
TO-236AB Package
See Section G
Pin Configuration
1 Cathode, 2 Cathode, 3 Anode
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