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NX3P1108

Logic controlled high-side power switch

NXP Semiconductors. 

NXP Semiconductors

NX3P1108

Logic controlled high-side power switch



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(1) Tamb = 40 C.

(2) Tamb = 25 C.

(3) Tamb = 85 C.

Fig 11. Waveforms showing the OFF-state leakage current versus input voltage on pin VIN

12.2 ON resistance

Table 9. ON resistance

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Tamb = 40 C to +85 C

Min

Typ[1]

Max

RON

ON resistance

VI(EN) = VI(VIN); ILOAD = 200 mA;

see Figure 12, Figure 13 and

Figure 14

VI(VIN) = 0.9 V

VI(VIN) = 1.2 V

VI(VIN) = 1.5 V

VI(VIN) = 1.8 V

VI(VIN) = 2.5 V

VI(VIN) = 3.3 V

-

105

140

-

68

81

-

55

65

-

50

55

-

40

44

-

34

40

[1] Typical values are measured at Tamb = 25 C.

Unit

m

m

m

m

m

m

NX3P1108

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 9 January 2013

© NXP B.V. 2013. All rights reserved.

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