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ADP3212(OLD) Просмотр технического описания (PDF) - ON Semiconductor

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ADP3212 Datasheet PDF : 43 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADP3212/NCP3218
Parameter
BST Quiescent Current
LOW-SIDE MOSFET DRIVER
Pull-up Resistance, Sourcing
Current3
Pull-down Resistance,
Sinking Current3
Transition Times
Propagation Delay Times
SW Transition Timeout
SW Off Threshold
PVCC Quiescent Current
BOOTSTRAP RECTIFIER
SWITCH
On Resistance3
Symbol
trDRVL
tfDRVL
tpdhDRVL
tTOSW
VOFFSW
Conditions
EN = L (Shutdown)
EN = H, no switching
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
DRVH = L, SW = 2.5 V
EN = L (Shutdown)
EN = H, no switching
EN = L or EN = H and DRVL = H
1 All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2 Guaranteed by design or bench characterization, not production tested.
3 Based on bench characterization data.
Min Typ
1
200
1.7
0.8
15
14
11
100 250
2.5
1
170
Max Units
10 μA
μA
2.8 Ω
1.7 Ω
35 ns
35 ns
30 ns
350 ns
V
10 μA
μA
4
6
8
Ω
Rev. SpA | Page 8 of 43

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