ACT8931AQJ633-T Просмотр технического описания (PDF) - Active-Semi, Inc

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Компоненты Описание

производитель

ACT8931AQJ633-T

PMIC Solutions

Active-Semi, Inc 

ACT8931A

Rev 3, 29-Nov-12

ABSOLUTE MAXIMUM RATINGS

VP1, VP2 to GP12

VP3 to GP3

BAT, VSYS, INL to GA

PARAMETER

VALUE

-0.3 to + 6

-0.3 to + 6

UNIT

V

V

CHGIN to GA

-0.3 to + 14

V

SW1, OUT1 to GP12

-0.3 to (VVP1 + 0.3)

V

SW2, OUT2 to GP12

-0.3 to (VVP2 + 0.3)

V

SW3, OUT3 to GP3

-0.3 to (VVP3 + 0.3)

V

nPBIN, ACIN, CHGLEV, ISET, LBI, PWRHLD, REFBP, SCL, SDA, TH, VSEL, nIRQ,

nLBO, nPBSTAT, nRSTO, nSTAT to GA

-0.3 to + 6

V

OUT4, OUT5, OUT6, OUT7 to GA

-0.3 to (VINL + 0.3)

V

GP12, GP3 to GA

-0.3 to + 0.3

V

Operating Ambient Temperature

-40 to 85

°C

Maximum Junction Temperature

125

°C

Maximum Power Dissipation

TQFN55-40 (Thermal Resistance θJA = 30oC/W)

Storage Temperature

2.7

W

-65 to 150

°C

Lead Temperature (Soldering, 10 sec)

300

°C

: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.

Innovative PowerTM

ActivePMUTM and ActivePathTM are trademarks of Active-Semi.

I2CTM is a trademark of NXP.

-7-

www.active-semi.com

Copyright © 2012 Active-Semi, Inc.

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