MBC13917EP Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MBC13917EP

General Purpose SiGe:C RF Cascode Low Noise Amplifier

Freescale Semiconductor 

Electrical Characteristics

2 Electrical Characteristics

Table 1 lists the recommended operating conditions of the MBC13917 device.

Table 1. Recommended Operating Conditions

RF Frequency

Supply Voltage

Characteristic

Symbol

Min

fRF

100

VCC

2.1

Typ

Max Unit

—

2500 MHz

2.7

3.3

Vdc

Table 2. lists the maximum ratings for the device.

Table 2. Maximum Ratings (TA = 25°C, unless otherwise noted)

Rating

Symbol

Value

Unit

Supply Voltage

VCC

3.5

Vdc

RF Input Power

PRF

10

dBm

Power Dissipation

PDIS

100

mW

Supply Current

Icc

20

mA

Thermal Resistance, Junction to Case

RθJC

400

°C/W

Storage Temperature Range

Tstg

-65 to 150

°C

Operating Ambient Temperature Range

TA

-40 to 85

°C

Operating Case Temperature

Tc

-40 to 100

°C

Note: Maximum Ratings and ESD

1. Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical

Characteristics tables.

2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V. Additional

ESD data is available upon request.

Table 3 lists electrical characteristics associated with noise performance measured in a 50 Ω system.

Additional noise parameters are listed in Table 9.

Table 3. Device Level Characteristics

(Vcc = 2.7V, TA = 25°C, measured in S-parameter test fixture, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Insertion Gain

f= 350 MHz

f= 430 MHz

f= 900 MHz

21.7

23.7

—

|S21|

21.4

23.4

—

dB

See note below

18.7

20.7

—

f= 1900 MHz

12.6

14.6

—

MBC13917 Advance Information, Rev. 1.0

Freescale Semiconductor

3

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