NGTB20N135IHRWG(2013) Просмотр технического описания (PDF) - ON Semiconductor
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NGTB20N135IHRWG Datasheet PDF : 10 Pages
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NGTB20N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
1350
V
IC
A
40
20
Pulsed collector current, Tpulse
limited by TJmax, 10 ms Pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM
120
A
IF
A
40
20
Diode pulsed current, Tpulse limited
IFM
by TJmax, 10 ms Pulse, VGE = 0 V
Gate−emitter voltage
VGE
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
PD
@ TC = 25°C
@ TC = 100°C
120
A
$20
V
±25
W
394
197
Operating junction temperature
range
TJ
−40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175 °C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 1350 V
VCEsat = 2.20 V
Eoff = 0.60 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
20N135IHR
AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB20N135IHRWG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 0
Publication Order Number:
NGTB20N135IHR/D
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