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IPP055N03LGHKSA1 Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
IPP055N03LGHKSA1
OptiMOS™3 Power-Transistor
Infineon Technologies
IPP055N03LGHKSA1 Datasheet PDF : 11 Pages
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5
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7
8
9
10
Parameter
Symbol Conditions
IPP055N03L G
IPB055N03L G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=15 V,
V
GS
=10 V,
-
t
d(off)
I
D
=30 A,
R
G
=1.6
Ω
-
t
f
-
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
-
Q
g(th)
-
Q
gd
V
DD
=15 V,
I
D
=30 A,
-
Q
sw
V
GS
=0 to 4.5 V
-
Q
g
-
V
plateau
-
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
-
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
-
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
Reverse Diode
Diode continuous forward current
I
S
-
T
C
=25 °C
Diode pulse current
I
S,pulse
-
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
-
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/µs
-
6)
See figure 16 for gate charge parameter definition
2400
920
49
6.7
5.2
25
4.0
3200 pF
1200
-
- ns
-
-
-
7.5
- nC
3.8
-
3.5
-
7.1
-
15
-
3.1
-V
31
-
13
- nC
24
-
-
50 A
-
350
0.88
1.1 V
-
20 nC
Rev. 1.04
page 3
2010-01-18
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