IRG7R313 Просмотр технического описания (PDF) - International Rectifier
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IRG7R313 Datasheet PDF : 8 Pages
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IRG7R313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
Collector-to-Emitter Breakdown Voltage
ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient
VCE(on)
Static Collector-to-Emitter Voltage
330 ––– ––– V VGE = 0V, ICE = 250μA
––– 0.4 ––– V/°C Reference to 25°C, ICE = 1mA
––– 1.21 1.45
––– 1.35 –––
e VGE = 15V, ICE = 12A
e VGE = 15V, ICE = 20A
e 1.75 ––– V VGE = 15V, ICE = 40A
––– 2.14 –––
––– 1.41 –––
e VGE = 15V, ICE = 60A
e VGE = 15V, ICE = 20A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.2 ––– 4.7 V VCE = VGE, ICE = 1.0mA
ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient
ICES
Collector-to-Emitter Leakage Current
––– -10 ––– mV/°C
––– 1.0 10
VCE = 330V, VGE = 0V
25 150 μA VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 –––
VCE = 330V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe
Forward Transconductance
Qg
Total Gate Charge
––– 47 ––– S VCE = 25V, ICE = 12A
e ––– 33 ––– nC VCE = 240V, IC = 12A, VGE = 15V
Qgc
Gate-to-Collector Charge
––– 12 –––
td(on)
tr
td(off)
Turn-On delay time
Rise time
Turn-Off delay time
––– 1.0 –––
––– 13 –––
––– 65 –––
IC = 12A, VCC = 196V
ns RG = 10Ω, L=210μH
TJ = 25°C
tf
Fall time
––– 68 –––
td(on)
Turn-On delay time
––– 11 –––
IC = 12A, VCC = 196V
tr
td(off)
tf
tst
EPULSE
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– 14 ––– ns RG = 10Ω, L=200μH, LS= 150nH
––– 86 –––
TJ = 150°C
––– 190 –––
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1Ω
––– 480 –––
L = 220nH, C= 0.20μF, VGE = 15V
μJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 570 –––
L = 220nH, C= 0.20μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 1C
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies
Input Capacitance
Coes
Output Capacitance
––– 880 –––
––– 47 –––
VGE = 0V
pF VCE = 30V
Cres
Reverse Transfer Capacitance
––– 26 –––
ƒ = 1.0MHz
LC
Internal Collector Inductance
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
LE
Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
Half sine wave with duty cycle = 0.05, ton=2μsec.
Rθ is measured at TJ of approximately 90°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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