BAS3010A Просмотр технического описания (PDF) - Infineon Technologies

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BAS3010A

Medium Power AF Schottky Diode

Infineon Technologies 

Medium Power AF Schottky Diode

• Forward current: 1 A

• Reverse voltage: 30 V

• Very low forward voltage

(typ. 0.41V @ IF = 1A)

• For high efficiency DC/DC conversion,

fast switching, protection and

clamping applications

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BAS3010A...

BAS 3010A-03W



Type

BAS3010A-03W

Package

SOD323

Configuration

single

Marking

4/ blue

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage2)

Forward current2)

VR

30

V

IF

1

A

Average rectified forward current (50/60Hz, sinus) IFAV

1

Repetitive peak forward current

(tp ≤ 1 ms, D ≤ 0.5)

I FRM

3.5

Non-repetitive peak surge forward current

I FSM

10

(t ≤ 10ms)

Junction temperature

Tj

150

°C

Operating temperature range

Top

-65 ... 125

Storage temperature

Tstg

-65 ... 150

1Pb-containing package may be available upon special request

2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.

1

2007-04-10

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