STPS30H100DJF-TR Просмотр технического описания (PDF) - STMicroelectronics
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STPS30H100DJF-TR Datasheet PDF : 10 Pages
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STPS30H100DJF
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
30 PF(AV )(W)
25
20
15
10
5
0
0
5
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ= 1
T
IF(AV)(A)
δ =Tp/T
tp
10
15
20
25
30
35
Characteristics
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
IF (A V )(A)
35
30
25
20
15
10
T
5
δ =tp/T
tp
0
0
25
50
Rth(j -a)=Rth(j-c)
Tamb(°C)
75
100
125
150
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
1.0 Zth(j-c) /Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
t p (s)
1.E+00
Figure 4: Reverse leakage current versus reverse
voltage applied (typical values)
1.E+02 IR(mA)
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Tj = 25 °C
VR(V)
10 20 30 40 50 60 70 80 90 100
Figure 5: Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
10000
F = 1 MHz
Vosc = 30mVRMS
Tj = 25 °C
Figure 6: Forward voltage drop versus forward
current
1000
100
1
VR(V)
10
100
DocID023024 Rev 2
3/10
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