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USB1T1103 Просмотр технического описания (PDF) - Fairchild Semiconductor

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USB1T1103 Datasheet PDF : 15 Pages
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ESD Protection
ESD Performance of the USB1T1103
HBM D/D: 15.0kV
HBM, all other terminals (Mil-Std 883E): 6.5kV
ESD Protection: D/D Terminals
Since the differential terminals of a USB transceiver may
be subjected to extreme ESD voltages, additional immunity
has been included in the D and D terminals without com-
promising performance. The USB1T1103 differential termi-
nals have ESD protection to the following limits:
15kV using the contact Human Body Model
8kV using the Contact Discharge method as specified in
IEC 61000-4-2
Human Body Model
Figure 1 shows the schematic representation of the Human
Body Model ESD event. Figure 2 is the ideal waveform rep-
resentation of the Human Body Model.
IEC 61000-4-2, IEC 60749-26 and IEC 60749-27
The IEC 61000-4-2 standard covers ESD testing and per-
formance of finished equipment, and as such evaluates the
equipment in its entirety for ESD immunity. Fairchild
Semiconductor has evaluated this device using the
IEC 6100-4-2 representative system model depicted in Fig-
ure 3. Under the additional standards set forth by the IEC,
this device is also compliant with IEC 60749-26 (HBM) and
IEC 60749-27 (MM).
Additional ESD Test Conditions
For additional information regarding our product test meth-
odologies and performance levels, please contact Fairchild
Semiconductor.
FIGURE 1. Human Body ESD Test Model
FIGURE 2. HBM Current Waveform
www.fairchildsemi.com
FIGURE 3. IEC 61000-4-2 ESD Test Model
6

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