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USB1T1103MHX(2007) Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
USB1T1103MHX
(Rev.:2007)
Fairchild
Fairchild Semiconductor Fairchild
USB1T1103MHX Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ESD Protection
ESD Performance of the USB1T1103
HBM D+/D-: 15.0kV
HBM, all other terminals (Mil-Std 883E): 6.5kV
ESD Protection: D+/D- Terminals
Since the differential terminals of a USB transceiver may
be subjected to extreme ESD voltages, additional immu-
nity has been included in the D+ and D- terminals with-
out compromising performance. The USB1T1103
differential terminals have ESD protection to the follow-
ing limits:
15kV using the contact Human Body Model
8kV using the Contact Discharge method as specified
in IEC 61000-4-2
Human Body Model
Figure 3 shows the schematic representation of the
Human Body Model ESD event. Figure 4 is the ideal
waveform representation of the Human Body Model.
IEC 61000-4-2, IEC 60749-26 and IEC 60749-27
The IEC 61000-4-2 standard covers ESD testing and
performance of finished equipment and evaluates the
equipment in its entirety for ESD immunity. Fairchild
Semiconductor has evaluated this device using the
IEC 6100-4-2 representative system model depicted in
Figure 5. Under the additional standards set forth by the
IEC, this device is also compliant with IEC 60749-26
(HBM) and IEC 60749-27 (MM).
Additional ESD Test Conditions
For additional information regarding our product test
methodologies and performance levels, please contact
Fairchild Semiconductor.
Figure 3. Human Body ESD Test Model
Figure 4. HBM Current Waveform
Figure 5. IEC 61000-4-2 ESD Test Model
© 2005 Fairchild Semiconductor Corporation
USB1T1103 Rev. 1.0.3
6
www.fairchildsemi.com

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