SUM60N10-17 Просмотр технического описания (PDF) - Vishay Semiconductors
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SUM60N10-17 Datasheet PDF : 8 Pages
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SUM60N10-17
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.5
100
VGS = 10 V
ID = 30 A
2.0
1.5
10
TJ = 150 °C
TJ = 25 °C
1.0
0.5
0.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
130
ID = 10 A
125
120
115
110
105
100
95
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 72070
4
S12-0335-Rev. C, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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