DF8064101211300SR0VY Просмотр технического описания (PDF) - Intel

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Intel® Atom™ Processor D2000 and N2000 Series

Intel 

1.2

System Memory Features

• One channel of DDR3

• memory (consists of 64 data lines):

— Maximum of two SODIMMs per channel for D2000 series and N2800 Processor

performance, containing single or double-sided SODIMM

— Maximum of one SODIMMs per channel for N2600 series Processor only,

containing single or double-sided SODIMM.

• Memory DDR3 data transfer rates of 800 MT/s (6.4 GB/s) and 1066 MT/s

(8.5 GB/s)

• Only non-ECC SODIMMs are supported

• Refreshed SKU of Next Generation Intel® Atom™ Processor based Mobile Platform

Processors support DDR3/DDR3L.

• Support Small Outline DIMMs Raw Cards RC-A (2Rx16), RC-B(1Rx8), RC-C (1Rx16)

and RC-F (2Rx8) for DDR3. Support Small Outline DIMMs Raw Cards RC-B (1Rx8)

and RC-F (2Rx8) for DDR3L.

— Does not support RC-D (2Rx16 dual die), and RC-E(2Rx16)

— No mixed Raw Card support.

• Support unbuffered SODIMMs

• Supports Memory Down Design with Raw Card Type B only

• I/O Voltage of 1.5 V for DDR3. I/O Voltage of 1.35 V for DDR3L.

• Max memory size by sku: N2600 series 2 GB; N2800, D2500 & D2700 series 4 GB

• Supports total memory size of 1 GB, 2 GB and 4 GB max

• Supports Max densities 1 Gbit, 2 Gbit for both x8 and x16 for DDR3

• DRAM Chip Data Width: x8 and x16

• Banks / DRAM Chip: 8

• Support up to 32 simultaneous open pages per channel (assuming 4 ranks of

8 devices)

• Support Partial Writes to memory using Data Mask signals (DM)

• Enhances Address Mapping

• Support DIMM page size of 1 KB and 2 KB

• Support data burst length of 8 and Burst Chopped of 4 for all memory

configurations

• Support memory thermal management scheme to selectively manage reads and/or

writes. Memory thermal management can be triggered by either on-die thermal

sensor, or by preset limits. Management limits are determined by weighted sum of

various commands that are scheduled on the memory interface.

10

Datasheet - Volume 1 of 2

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